View IRFBA22N50APBF_4120371.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SMPS MOSFET
PD-95905
IRFBA22N50APBF
HEXFET(R) Power MOSFET
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free Benefits
l l l l
VDSS
500V
RDS(on) max
0.23
ID
24A
Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss Specified (See AN1001)
Super-220 (TO-273AA)
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Recommended clip force
Max.
24 15 96 340 2.7 30 3.4 -55 to + 150 300 (1.6mm from case ) 20
Units
A W W/C V V/ns C N
Applicable Off Line SMPS Topologies:
l l
Full Bridge Converters Power Factor Correction Boost
Notes
through
are on page 8
www.irf.com
1
09/15/04
IRFBA22N50APBF
Static @ TJ = 25C (unless otherwise specified)
V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 --- 2.0 --- --- --- --- Typ. --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, I D = 250A 0.23 VGS = 10V, ID = 13.8A 4.0 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 12 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 20 66 46 44 3400 500 17 4900 130 150 Max. Units Conditions --- S VDS = 50V, ID = 13.8A 115 ID = 23A 30 nC VDS = 400V 50 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 23A ns --- RG = 4.3 --- RD = 10.6,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
1200 24 34
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
0.37 --- 58
Units
C/W
Diode Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 23 --- --- showing the A G integral reverse --- --- 92 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 23A, VGS = 0V --- 500 750 ns TJ = 25C, IF = 23A --- 6.4 9.6 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRFBA22N50APBF
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
1
4.5V
4.5V
0.1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 23A
I D , Drain-to-Source Current (A)
2.5
TJ = 150 C
2.0
10
1.5
TJ = 25 C
1.0
0.5
1 4.0
V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRFBA22N50APBF
7000
6000
VGS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 23A
16
VDS = 400V VDS = 250V VDS = 100V
C, Capacitance (pF)
5000
4000
12
Ciss
3000
8
Coss
2000
4
1000
Crss
A
1 10 100 1000
0
0
FOR TEST CIRCUIT SEE FIGURE 13
0 20 40 60 80 100 120
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
TJ = 150 C
10
I D , Drain Current (A)
100 10us
100us 10 1ms
TJ = 25 C
1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2 1.4 1.6
1
TC = 25 C TJ = 150 C Single Pulse
10 100
10ms
1000
10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRFBA22N50APBF
25
V DS VGS
RD
20
ID , Drain Current (A)
RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-VDD
15
10
Fig 10a. Switching Time Test Circuit
5
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFBA22N50APBF
EAS , Single Pulse Avalanche Energy (mJ)
15V
2500
VDS
L
DRIVER
2000
ID 10.7A 15A BOTTOM 24A TOP
RG
20V
D.U.T
IAS tp
+ V - DD
1500
A
0.01
1000
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
500
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( C)
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS VG QGD
V DSav , Avalanche Voltage (V)
640
630
Charge
620
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
610
50K 12V .2F .3F
600
D.U.T. VGS
3mA
+ V - DS
590 0 4 8 12 16 20 24
A
I av , Avalanche Current (A)
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current
6
www.irf.com
IRFBA22N50APBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFET
www.irf.com
7
IRFBA22N50APBF
Super-220 ( TO-273AA ) Package Outline
A
11.00 [.433] 10.00 [.394]
5.00 [.196] 4.00 [.158]
B
9.00 [. 8.00 [. 0.25 [
1.50 [.059] 0.50 [.020]
4
15.00 [.590] 14.00 [.552]
13.50 [. 12.50 [.
1
2
3
4.00 [.157] 3.50 [.138]
14.50 [.570] 13.00 [.512]
3X 2.55 [.100] 2X
1.30 [.051] 0.90 [.036] BA
4X
1.00 [.039] 0.70 [.028] 3.00 [.118] 2.50 [.099]
0.25 [.010]
MOSFET
IGBT
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 3.4mH
RG = 25, IAS = 24A. (See Figure 12)
ISD 23A, di/dt 123A/s, VDD V(BR)DSS,
TJ 150C
8
www.irf.com
IRFBA22N50APBF
Super-220 (TO-273AA) Part Marking Information
EXAMPLE: THIS IS AN IRFBA22N50A WITH ASSEMBLY LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" PART NUMBER INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
IRFBA22N50A 719C 17 89
DATE CODE YEAR 7 = 1997 WEEK 19 LINE C
Note: "P" in assembly line position indicates "Lead-Free"
TOP
Super-220 not recommended for surface mount application Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04
www.irf.com
9

▲Up To Search▲

Price & Availability of IRFBA22N50APBF

	To Download IRFBA22N50APBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .